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GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US Diamond on Silicon wafer Perfect for ferroelectric epitaxial thim
GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US Diamond on Silicon wafer Perfect for ferroelectric epitaxial thim
$171.93
Description
Perfect for ferroelectric epitaxial thim film
especially for sodium-ion batteries
MSK-PN110-S is a compact crimper driven by compressed inert gas or air for various types of coin cells such as CR2016
If CVD gases are considered to be corrosive to stainless steel
GaAs, VGF Grown (110) orientation, SI, undoped, 2" dia x 0.5mm, 2sp - GAUe50D05C2-US Diamond on Silicon wafer Perfect for ferroelectric epitaxial thimGaAs single crystal wafer Growing Method: VGF Orientation: (110) Size: 2" dia x 0. 5mm Polishing: two sides polished Doping: undoped, Conductor type: SI (Semi insulating ) Carrier Concentration: N A Mobility: 3710 6230 cm^2 V. S EPD: N A Resistivity: (0. 8 4. 8)E8 ohm. cm Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
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