Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm Bi4Ge3O12(BGO12) (optional) 100T Manual 100T Electric

(optional) 100T Manual  100T Electric     200T Electric

And then rinse with deionized water and anhydrous ethanol to ensure the surface of the Ni foam was well cleaned

Gold layer thickness: 50nm (+/- 5nm)

Surface Quality

Ge Substrate: (100) 10x5 x 0.5 mm , 2SP, N type Sb doped,R:0.01-0.05 Ohm.cm Bi4Ge3O12(BGO12) (optional) 100T Manual 100T ElectricGe Wafer Specification Growing Method: CZ Wafer Size: 10x5 x0. 5 mm Surface Polishing: two sides epi polished Orientation: (100) Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Sb doped Conductor type: N type Resistivity: 0. 01 0. 05 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other