99. 9% Density: 4. 506 g cm3 Melting Point: 1668C Size: 1" dia x 0. 5 mm Surface finish: One side polished < 30A by AFM within a 5x5 micron area Application: substrates for metal, alloy film, and biological materials Related Product Metallic Substrate A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater">
99. 9% Density: 4. 506 g cm3 Melting Point: 1668C Size: 1" dia x 0. 5 mm Surface finish: One side polished < 30A by AFM within a 5x5 micron area Application: substrates for metal, alloy film, and biological materials Related Product Metallic Substrate A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater">
99. 9% Density: 4. 506 g cm3 Melting Point: 1668C Size: 1" dia x 0. 5 mm Surface finish: One side polished < 30A by AFM within a 5x5 micron area Application: substrates for metal, alloy film, and biological materials Related Product Metallic Substrate A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater">
Titanium (Ti) Metallic Substrate: 1"x0.5 mm, 1side polished - mcTi25D05C1 Fe(SS-Poly) The thickness of the silicon – caravantapijt.nl
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The thickness of the silicon oxide layer is 500 nm
For advanced control over gas flow
Crystal structure: Orthorhombic
Gel Sticky Carriers
Titanium (Ti) Metallic Substrate: 1"x0.5 mm, 1side polished - mcTi25D05C1 Fe(SS-Poly) The thickness of the siliconPolycrystal Ti metallic substrate Purity: > 99. 9% Density: 4. 506 g cm3 Melting Point: 1668C Size: 1" dia x 0. 5 mm Surface finish: One side polished < 30A by AFM within a 5x5 micron area Application: substrates for metal, alloy film, and biological materials Related Product Metallic Substrate A Z Plasma Cleaner Wafer Containers Dicing saw Film Coater
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