1 x 107 Ohm. cm Mobility: 4500 cm 2 V. S Carrire Concentration: <1 x108 cm^ 3 EPD: < 5x104 cm 2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces"> 1 x 107 Ohm. cm Mobility: 4500 cm 2 V. S Carrire Concentration: <1 x108 cm^ 3 EPD: < 5x104 cm 2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces"> 1 x 107 Ohm. cm Mobility: 4500 cm 2 V. S Carrire Concentration: <1 x108 cm^ 3 EPD: < 5x104 cm 2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces"> GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut Ceramic Coatings and Adhesives L=L1+L2:=220+280=500mm – caravantapijt.nl

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GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut Ceramic Coatings and Adhesives L=L1+L2:=220+280=500mm

$574.42

Quantity
Description

L=L1+L2:=220+280=500mm

Please clean the grinding ring before each use

EPD:1x10^4 cm^-2

70 m3/h The rotation speed at 50 Hz 1500 RPM The rotation speed at 60 Hz 1800 RPM Switch Yes

GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut Ceramic Coatings and Adhesives L=L1+L2:=220+280=500mmGaAs single crystal wafer Growing Method: LEC Orientation: (110) Size: 2" dia x 2. 8 mm Polishing: As Cut Doping: undoped Conductor type: Semi Insulating Resistivity: >1 x 107 Ohm. cm Mobility: 4500 cm 2 V. S Carrire Concentration: <1 x108 cm^ 3 EPD: < 5x104 cm 2 Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces

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