SiC - 6H (0001) 8mm dia. x 0.3 mm th., one side polished Oven (Note: Updated information on 5/21/2015)

(Note: Updated information on 5/21/2015)

tip-collector distance

660 V~50KA Current  50 A  Dimension  43 x 43 mm

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SiC - 6H (0001) 8mm dia. x 0.3 mm th., one side polished Oven (Note: Updated information on 5/21/2015)Specifications of Substrate Orientation: <0001> + 0. 5 Dimension: 8mm Dia. x 0. 3mm Polished: One side epi polished Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 08 A c = 15. 117 A Stacking sequence: ABCACB (6H) Growth Technique: MOCVD Polishing: Silicon face polished Band Gap: 3. 03eV ( Indirect) Conductivity type: N TTV Bow Warp:<25um Micropipe Density: