InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc Specifications Dimensions (Dia x Height)
$931.50
Description
Specifications Dimensions (Dia x Height) Case: 16
Cutting Blade
Dimension:20mm x 20mm x 3
Heating elements are very brittle and could break if the separator is too wide or if too much pressure is applied on them
InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US Sc Specifications Dimensions (Dia x Height)2" InSb wafer (N type, Te Doped ) Size: 2" dia x 0. 45 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
You may also like
US$ 79.00
US$ 43.92
US$ 10.00
US$ 120.00
US$ 87.00
US$ 33.00
US$ 274.50
US$ 259.50
US$ 366.00
US$ 147.50
US$ 503.50