SiC - 4H (0001), 5x5x0.3 mm , one side polished BaF2 0mm Electrical Insulating Good Hot
$48.64
Description
0mm Electrical Insulating Good Hot Sealing Condition 180-190°C Moisture Vapor / O2 Transmission Rate 200ppm / 5 years Solvent Retention Less than 5mg/m2 Appearance Within the sample of the limit Slip Factor
LSAT LaAlO3 MgO Plasma Cleaner NdCaAlO4 NdGaO3 SrTiO3 Wafer Box SrLaAlO4 Other GGG YSZ Film Coater
Suggested Sealing Method (parameter below may vary from case to case):
Packing: 50g per bag packed in dry inert gas
SiC - 4H (0001), 5x5x0.3 mm , one side polished BaF2 0mm Electrical Insulating Good HotSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 5x5 x 0. 3 + 0. 03 mm Polished: One sides epi polished on Si face Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 05 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26 eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35um
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